发明名称 Microwave plasma film deposition system
摘要 A microwave plasma film deposition system comprises a waveguide for feeding microwaves through a microwave feeding window provided at one end of the waveguide, and a plasma cavity in communication with the other end of the waveguide and having a discharge gas inlet which is not in communication with the waveguide. The system further includes a specimen chamber which is in communication with the plasma cavity and which has a substrate setting rest therein and a material gas inlet, and a magnetic field applying device provided near the plasma cavity. Stable film deposition occurs because the plasma cavity is at the end of the waveguide which is remote from the microwave feeding window, whereby deposition on the microwave feeding window is prevented. Deposition on the microwave feeding window is further prevented by a ferromagnetic material which is placed around the waveguide and which reduces the strength of the magnetic field in the waveguide.
申请公布号 US5125358(A) 申请公布日期 1992.06.30
申请号 US19890384699 申请日期 1989.07.25
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 UEDA, TETSUYA;SUZUKI, NAOKI;YANO, KOHSAKU
分类号 C23C16/511;H01J37/32 主分类号 C23C16/511
代理机构 代理人
主权项
地址