| 摘要 |
PURPOSE:To obtain the substrate for functional thin-film devices from which waveguide type optical switches can be produced by forming 3 layers of epitaxial films consisting of an insulator, conductive oxide and ferrodielectrics on a silicon single crystal substrate. CONSTITUTION:An epitaxial film 4 of the conductive oxide selected from an RuO2 film OsO2 film IrO2 film and ReO3 film is formed via an MgAl2O4 film 2 or this spinel film and an insulator epitaxial film which is an MgO film 3 formed thereon on the silicon single crystal substrate 1. A dielectric epitaxial film 5 which is a solid soln. expressed by chemical formula ABO3, contg. >=1 kinds among Pb, La, Ba, Sr, and Li and contg. >=1 kinds among Ti, Zr, Nb, and Ta or Bi4Ti3O12 is formed thereon, by which the above substrate is obtd. |
