| 摘要 |
PURPOSE:To make an island region extremely large and to enhance an integration density by a method wherein a (110) silicon single-crystal substrate is used as a silicon single-crystal bonding substrate, an anisotropic etching operation is executed by using an alkaline etchant, a vertical isolation groove reaching an insulating film is formed and the island region is formed. CONSTITUTION:The surface of a semiconductor substrate (a bonding substrate) 22, of single-crystal silicon, whose main surface is a (110) plane is covered with an insulating film 24; an oxide film 30 is formed on the surface of the bonding substrate 22 at a substrate bonded body 28 which is composed of the bonding substrate 22 and of a semiconductor substrate (a support substrate) 26 by single-crystal silicon on one side. Windows 32 are opened; an anisotropic etching operation is executed by using an alkaline etchant; isolation grooves 34 which reach the insulating film 24 and which are provided with vertical sidewalls are formed; a square island region 36 is formed. Consequently, the effective area of an element on the surface of the bonding substrate 22 can be made large. Thereby, the island region can be made extremely large and an integration density can be enhanced.
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