| 摘要 |
<p>PURPOSE:To improve reliability by protecting switching the elements against the UV rays to be cast at the time of polymerizing a monomer or during the use by forming a UV ray protective film on the surface of the switching element. CONSTITUTION:A thin-film transistor TFT element is first formed on a substrate 1 and a picture element 7, a gate electrode 2, a gate insulating layer 3, a semiconductor layer 4, a drain electrode 5, and a source electrode 6 are successively formed thereon. The UV ray protective layer 8 is further formed thereon. This protective layer 8 protects the switching elements 2 to 7 against the UV rays to be cast at the time of polymerizing the monomer to be used for a high- polymer/liquid crystal layer 9 or the UV rays to be cast during the use. The deterioration of the elements 2 to 7 is suppressed in this way and the reliability is improved.</p> |
