Insulated Gate Type Field Effect Transistor

摘要

1,172,280. Field-effect transistors. MATSUSHITA ELECTRONICS CORP. 17 April, 1967 [9 May, 1966], No. 17450/67. Heading H1K. In an IGFET, that part of the gate metallization to which the lead is bonded is supported by insulation which lies over a region in which the surface of the semi-conductor substrate is made of the opposite conductivity type to the bulk. By applying a bias to the gate electrode of polarity such as would reverse bias the junction between surface region and bulk it becomes possible to use a transistor in which the insulation under the gate connection area has become damaged during bonding. The structure has the further advantage (with intact insulation) of reducing the gate-source capacitance since the components due to the insulation and PN-junction are in series.