| 摘要 |
<p>PURPOSE:To make it possible to reduce the restrictions on the composition of glass frit by flending the amount of ruthenium compound conductive powder at 15-75% of the total weight of a mixture of a specified ruthenium compound conductive powder and nonreductive glass frit. CONSTITUTION:As the conductive powder for a thick film resistor composition, a ruthenium compound with a chemical composition defined by the following chemical formula (Ba1-xAx)m(Ru1-yBy)nOm+2n (where A includes at least one of Ba, C, La, C, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y and x is in the range of 0<=x<=0.2 and B includes at least one of Zr, Ti, Hf, Nb, or Ta and y is in the range of 0<=y<=0.2 and 1<m/n<2) is used and this is mixed with nonreductive glass frit at a ratio of 15-75% of the total weight. As a result, the resistor is stable in a non-oxidized atmosphere, the temperature coefficient and voltage resistance characteristics are improved, and use with a copper conductor is possible. In this way, restrictions on the glass frit composition can be reduced.</p> |
