| 摘要 |
<p>PURPOSE:To decrease the number of sheets of photomasks to be used by executing respective stages for forming the islands of a 2nd insulating film and the islands of a semiconductor film by devising of gate wiring patterns and exposing processing from the rear surface of a substrate. CONSTITUTION:Opaque gate wirings 20 are formed on a transparent insulating substrate 1. The 1st insulating film 3, the semiconductor film 4 and the 2nd insulating film 5 are successively formed thereon. First resist patterns are formed on the 2nd insulating film 5 by the 1st exposing processing from the rear surface of the substrate 1 and the 2nd insulating film 5 formed as the islands is formed on the gate wirings 20 exclusive of the fined regions. Second resist patterns are formed on the 2nd insulating film 5 and the semiconductor film 4 exposed from the circumferences of the 2nd insulating film 5 by the 2nd exposing processing and the semiconductor film 4 formed as the islands at the width larger than the width of the 2nd insulating film 5 is formed in the position of the gate wirings 20 exclusive of the fined regions. Drain electrodes 7 and source electrodes 6 are formed on the semiconductor film 4. The number of the sheets of the photomasks to be used is decreased and the throughput is improved.</p> |
