| 摘要 |
<p>PURPOSE:To attain improvement in characteristics of an element which drives liquid crystal, its increases in density, and its increase in precision by processing a switching element on a semiconductor substrate with an insulating layer buried in a substrate by ion implantation. CONSTITUTION:After the surface silicon layer of an SIMOX substrate (Separation by IMplanted 0Xygen) 105 is patterned to form an oxide film, a polycrystaline silicon thin film is piled up and patterned; then, impurities are injected by ion implantation to form a gate electrode 106, a source region 107, and a drain region 108. An interlayer insulating film is formed and pierced by a contact hole, aluminum is deposited to form a source electrode 109 and a drain electrode serving as a metal reflector 110. Thereafter, a transparent substrate 101 with a transparent electrode 102 formed in a main face is opposed to the SIMOX substrate 105, and their gap is filled with liquid crystal. This process provides a display device of improved element characteristics, no dispersion among elements, and uniformity, and enables display with increases in both precision and image quality.</p> |
