发明名称 MANUFACTURE OF MULTILAYER INTERCONNECTION SUBSTRATE
摘要 PURPOSE:To enable a fine and high multilayer interconnection to be formed easily and positively by placing an anisotropic conductive film which consists of a resin indicating a thermoplastic property between layers of an insulation resin film whose wiring is formed and by performing heated contact bonding. CONSTITUTION:An anisotropic conductive film 5 consisting of a polyimide resin containing fluorine 3 and a metal particle 4 is placed between wiring films 9 or between layers with a substrate 1 where the wiring films 9 and a wiring conductor 2 are formed, positioning is performed for lamination, and then a hot plate oven 10 is used for heating while applying pressure using a press machine 11, thus enabling non-thermoplastic resin films 6 to be adhered with the polyimide film containing fluorine 3 as an adhesion layer and obtaining electrical connection so that a metal particle 4 is pressed for wiring conductors 2 and 7 and a conduction via hole 8 for completing a multilayer interconnection substrate. Therefore, it is possible to form a multilayer interconnection substrate with improved pattern accuracy using an easy process.
申请公布号 JPH04177864(A) 申请公布日期 1992.06.25
申请号 JP19900304152 申请日期 1990.11.13
申请人 NEC CORP 发明人 ORITO NAONORI;MATSUI KOJI
分类号 H05K3/46;H01L23/12;H01L23/14 主分类号 H05K3/46
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