| 摘要 |
PURPOSE:To provide a semiconductor memory having a high-resistance load resistor and thus less required current by forming a conductive film on an insulator-coated semiconductor film of the load resistor, and connecting the conductive film with the drain of the drive transistor for memory cells. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on one surface of a p-type single-crystal silicon substrate 1. After the gate oxide film is selectively removed, a polysilicon film is formed and patterned to provide a gate electrode 4-1, and then an undoped polysilicon film 8 is deposited to form a resistor pattern 8a. The high-value resistor pattern 8a is connected at one end to the gate electrode 4-1. A silicon oxide film 13 and a polysilicon film 14 are sequentially deposited and patterned for a second gate. The resistor pattern 8a is covered with polysilicon. Over the whole surface, arsenic is implanted to introduce an n-type impurity to a region for the second gate electrode 14 and the power line connected to the high-value resistor. |
