| 摘要 |
PURPOSE:To simplify manufacturing process without eliminating a light emitting area of a contact layer by providing a transparent contact layer for wavelength of emitted light and emitting the light generated by an active layer to the outside through the contact layer. CONSTITUTION:A P-Al0.3Ga0.7As lower clad layer 2, a P<->-Al0.03Ga0.97As active layer, a N--Al0.3Ga0.7As upper clad layer 4 and a N<+>-Al0.15Ga0.85As contact layer 5 are sequentially crystal-grown on a P-GaAs substrate 1. Thereafter, etching is made in the circular mesa shape from the contact layer 5 to the lower clad layer 2. Moreover, a SiO2 film 6 is formed on the upper surface and circumference of the circular mesa structure and on the upper surface of the lower clad layer 6. In addition, an Au/Zu, Au P-electrode 7 is formed at the lower surface of substrate 1 and a Au/Ge/Ni, Au N-electrode 8 on the SiO2 film 6. Light emission occurs at the active layer 3 since the N electrode 8 is removed in the circular shape and a current is applied between the electrodes 7 and 8 and thereby the light is emitted to the outside through the contact layer 5 and SiO2 film 6. |
