| 摘要 |
PURPOSE:To prevent short-circuit between electrodes and a clad layer by covering the side faces of a second clad layer at least halfway with the ends of an ohmic layer on a pair of side faces of a semiconductor laser element. CONSTITUTION:A p-type GaAs cap layer 7 on a pair of side faces B perpendicular to crystal cleavage planes A covers an n-type GaAs current block layer 6, a p-type InGaP layer 5, and a p-type InGaAlP clad layer 4. Thereby, even if a fusion agent 12 to connect a p-type electrode 11 and a stem 13 creeps up, the p-type InGaAlP clad layer 4 and the p-type electrode 11 do not make short-circuit, the yield improves, and, because the GaAs cap layer 7 is depressed, the creep-up the fusion agent 12 is controlled.
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