| 摘要 |
<p>A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield (6) having a line-of-sight surface (10) and a plasma target (7) having a target surface. The line-of-sight surface (10) defines a bore (9) through the plasma shield (6) and is located out of direct contact with a plasma stream, such as oxygen, which passes from a plasma chamber (2), through the bore (9), and into a reaction chamber (3). A semiconductor specimen is mounted on a support (5) in the reaction chamber (3). The target surface surrounds the specimen. The line-of-sight and target surfaces (10) are maintained at a substantially constant temperature by circulating a fluid medium through fluid passages (11) in the plasma shield (6) and plasma target (7). The plasma target (7) can include a removable plate (33) having the target surface on one side thereof. The plasma shield can include a removable gas ring (24) for ejecting gas, such as SiH4, into the bore.</p> |
