| 摘要 |
PURPOSE:To prevent the penetration of ions to an underlying MOS transistor during ion implantation by forming the drain and source of a thin-film transistor using a Schottky barrier between a titanium silicide layer and a silicon layer. CONSTITUTION:A p-type silicon substrate 1 includes an n<-> drain region 6a connected with a n<+> drain region 6 and a source region 7a connected with a source region 7 on its one major surface. This provides an LDD source/drain structure. A titanium layer and a silicon layer is formed sequentially and selectively to obtain a titanium silicide layer 10 by a heat treatment. A thin polycrystalline silicon layer 11 is formed on the surface including the silicide layer 10 to provide a titanium silicide layer 12 selectively on the polycrystalline silicon layer 11 above the source region (7 and 7a). The offset length X1 between the gate electrode 4 and drain region (titanium silicide 10) of a thin-film transistor has a degree of freedom depending on the first registration margin of the titanium silicide layer 10 with respect to the gate electrode. |
