发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent internal circuit malfunctioning caused by power source variation at an external circuit by permitting the distance between an external circuit power source electrode connecting part and an internal circuit power source electrode connecting part on the inner lead of a power source lead to be larger than the lead pitch. CONSTITUTION:A bonding part 32a set on an inner lead 22a on the outer lead side among power source leads 22 is connected with an external circuit power source electrode 31a on a semiconductor chip 30 by a bonding wire 33a, and a bonding part 31b set on an inner lead 22b at the leading edge is connected with an internal circuit power source electrode 32b by a bonding wire 33b. The distance between the bonding parts 32a and 32b is larger than the width of the semiconductor chip 30. Therefore, the mutual inductance of the inner leads present between such bonding parts is reduced. Thus, the influence of power source variation generated at the external circuit power source electrode 31a on the inner circuit power source electrode 31b through the inner leads 22a and 22b is suppressed and malfunction is prevented.
申请公布号 JPH04177846(A) 申请公布日期 1992.06.25
申请号 JP19900306449 申请日期 1990.11.13
申请人 TOSHIBA CORP 发明人 HIRUTA YOICHI
分类号 H01L23/12;H01L21/60;H01L23/485;H01L23/64 主分类号 H01L23/12
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