发明名称 MANGANESE DIOXIDE-BASED MATERIAL
摘要 The invention provides a manganese dioxide-based material which is highly crystalline and chemically prepared. The material has a predominantly ramsdellite structure, and has a powder X-ray diffraction pattern (CuK alpha radiation) in which the ratio of a [110] peak height to a [201] peak height is at least 0,6:1,0. The material can be used as an electrode material in an electrochemical cell 10.
申请公布号 GB9210014(D0) 申请公布日期 1992.06.24
申请号 GB19920010014 申请日期 1992.05.08
申请人 TECHNOLOGY FINANCE CORPORATION (PROPRIETARY) LIMITED 发明人
分类号 C01G45/00;C01G45/02;C25B11/06;C25B11/16;H01M4/131;H01M4/48;H01M4/485;H01M4/50;H01M4/505 主分类号 C01G45/00
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