| 摘要 |
PURPOSE:To prevent the decrease of relative permittivity when a dielectric film is thinned, by using metal wherein the forming free energy of oxide is larger than that of oxide of tantalum, as metal which constitutes a metal layer or a metal silicide layer. CONSTITUTION:Metal (tungsten) constituting a metal layer 1a turning to a part of a storage electrode 10a is metal wherein the forming free energy is larger than that of the oxide of tantalum(Ta) constituting a dielectric film 11. Hence a natural oxide film and a metal oxide film never exist on the interface between the storage electrode, 10a and tantalum pentoxide turning to the dielectric film 11. Thereby the formation of a natural oxide film, on the interface between the storage electrode 10a and the dielectric film 11 is prevented, so that a semiconductor storage device wherein the relative permittivity is not decreased when the dielectric film is thinned can be obtained. |
