Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region.

摘要

A contact to silicon is fabricated merging the benefits of a low contact resistance titanium silicide or cobalt silicide layer on the one hand and good step coverage obtained by a selective CVD of tungsten involving tungsten hexafluoride or of molybdenum involving molybdenum hexafluoride on the other hand. An intermediate layer of molybdenum silicide or tungsten silicide, formed over titanium 6ilicide or cobalt silicide by means of a physical vapor deposition, e.g., sputtering or vacuum evaporation, of the associated noble metals, protects against damaging by the fluorine while offering low resistance and good adhesion to both the underlying layer and the overlying layer.