| 摘要 |
PURPOSE:To enable analog signal to be output at a memory read-out time only by allowing a plurality of bits of digital data to be stored in a plurality of units of required memory cells and then calculating output current of each memory cell for outputting as amount of analog current or amount of voltage. CONSTITUTION:A memory cell 32 such as four bits are formed by enabling four detection-type memory cells 31 according to a ferroelectric body capacitor 21 of a polarization electric charge accumulation means, a first conductive film-insulation tunnel film which are formed at the ferroelectric body film, an MIM switch 20 in MIM switch in a second conductive film, a MOSFET 22, etc., to be placed. A four-bit digital datum which is memorized in this cell 32 is added and calculated at an operator 36 and analog current and analog voltage are outputted at memory read-out time only in a configuration which does not require an A/D converter, thus achieving an analog read-out type memory device for performing a high-speed read-out. |
