Light receiving device with a PIN structure.

摘要

A light absorbing layer (2b) and a window layer (2c) formed thereon constitutes a first conduction-type semiconductor layer (2). In a part of this first conduction-type semiconductor layer (2) there is provided a second conduction-type region (3) extending to the light absorbing layer (2b) through the window layer (2c). A part of the window layer (2c) around the second conduction-type region (3) is selectively removed. Consequently, even when light intended to enter a light detecting region (8) is incident outside of the light detecting region (8), most of the carriers generated there are recombined at a surface level of the light absorbing layer before diffusing in a depletion layer. Therefore, this light detecting device does not substantially show detection sensitivity to light incident outside the light detecting region (8). <IMAGE>