发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To eliminate unbalance of stray capacity of a bit line pair in a shunt part without increasing chip area, by making two bit lines a pair and inputting it in a sense amplifier, which bit lines have been dummy lines on both side of the shunt part of word lines. CONSTITUTION:As to bit lines 10a, 10b on both sides of the shunt part of word lines, one side is adjacent to bit lines, and the other side is adjacent to bit lines via a shunt part. As compared with bit lines in a memory cell array to both sides of which bit lines are adjacent, capacitance between lines is small. When the respective bit lines 10a, 10b on both sides of the shunt part of the word lines are compared, both of them have a structure where both of the adjacent parts are bit lines via a bit line and the shunt part, and stray capacity of the bit line 10a and stray capacity of the bit line 10b become quite equal. Hence, by using the bit lines 10a, 10b on both sides of these shunt parts by making them a pair and inputting it in a sense amplifier, a bit line constitution wherein stray capacity of the bit line pair is balanced in the shunt part can be obtained without increasing useless chip area.
申请公布号 JPH04177761(A) 申请公布日期 1992.06.24
申请号 JP19900304704 申请日期 1990.11.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUDA YOSHIO
分类号 G11C11/401;G11C11/407;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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