COMPOSITION FOR THICK FILM RESISTOR

摘要

PURPOSE:To produce the title composition for thick film resistor in small fluctuation coefficient of resistance value in high resistance region and small variation coefficient in permanent resistance during short time overload at high voltage by a method wherein specific amount of stannate is added to a composition comprising glass powder containing ruthenate and lead. CONSTITUTION:The title composition for thick film resistor is composed of ruthenate represented by a chemical formula of Pb2 Ru2Ox wherein x is within the range of 6-7 and particle diameter not exceeding 1000Angstrom as well as lead silicate glass powder in the mean particle diameter not exceeding 10mum containing silicon oxide exceeding 10wt% and lead oxide also exceeding 10wt% or ruthenate powder represented by the chemical formula of Pb2Ru2Ox wherein x is within the range of 6-7 and particle diameter not exceeding 1000Angstrom as well as lead silicate glass powder in the mean particle diameter not exceeding 10mum containing silicon oxide exceeding 10wt% and lead oxide also exceeding 10wt%, stannate powder and organic vehicle while the content ratio of stannate in inorganic constituent in this composition is to be 0.2-2wt%. In such a constitution, the title composition for thick film resistor in small fluctuation coefficient of resistance value and small variation coefficient in permanent resistance during short time overload testing step can be produced.