| 摘要 |
1,182,324. Semi-conductor device matrices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 16 May, 1967 [19 May, 1966], No. 22690/67. Heading H1K. [Also in Division G4] A transistor T is situated at each crossing point of a predetermined pattern in a matrix comprising pluralities of input and output conductors V, H, respectively. The emitter region E is connected to the corresponding output conductor H while the base region B is connected to the input conductor V. All the collector regions of the transistors are connected in common, and may comprise the bulk of the plate in which the matrix is formed. The embodiment shows an N-type silicon plate having diffused therein P-type and N-type base and emitter regions B, E, each input conductor V also comprising diffused P-type and N-type regions P, N, isolated from the N-type bulk by a reverse biased junction. The P-type and N-type regions comprising the input conductor V are connected together by a conducting layer AB. The output conductors H, and branch conductors AE and AB connecting the conductors to each transistor, consist of aluminium vapour deposited on to a silicon oxide coating over the semi-conductor surface. A photo-resist technique is used to define the diffusion and contact apertures in the oxide coating. The N-type regions E, N are of higher conductivity than the P-type regions B, P. Transistors may be formed at each crossing point on the matrix, but the emitter regions of those not lying in the predetermined pattern are not connected to the relevant conductor, e.g. by leaving the oxide layer unbroken over these regions. If required, the base regions may be connected to the conductors H, which may lie directly over contact apertures on the base regions. In this case the emitter regions will be connected to the conductors V. |
