发明名称 |
Conductivity-modulation metal oxide semiconductor field effect transistor |
摘要 |
A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the N base. A source electrode electrically conducts the P base and the source. A first gate electrode insulatively covers a channel region defined by the N+ source layer in the P base. A P drain layer is formed on an opposite substrate surface. An N+ second source layer is formed in a P type drain layer by diffusion to define a second channel region. A second gate electrode insulatively covers the second channel region, thus providing a voltage-controlled turn-off controlling transistor. A drain electrode of the MOSFET conducts the P type drain and second source. When the turn-off controlling transistor is rendered conductive to turn off the MOSFET a "shorted anode structure" is temporarily formed wherein the N type base is short-circuited to the drain electrode, whereby case, the flow of carriers accumulated in the N type base into the drain electrode is facilitated to accelerate dispersion of carriers upon turn-off of the transistor.
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申请公布号 |
US5124773(A) |
申请公布日期 |
1992.06.23 |
申请号 |
US19900563720 |
申请日期 |
1990.08.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAGAWA, AKIO;YAMAGUCHI, YOSHIHIRO;WATANABE, KIMINORI |
分类号 |
H01L29/06;H01L29/08;H01L29/40;H01L29/739;H01L29/745 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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