| 发明名称 |
Method of forming oxide layers by bias ECR plasma deposition |
| 摘要 |
A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.
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| 申请公布号 |
US5124014(A) |
申请公布日期 |
1992.06.23 |
| 申请号 |
US19910684453 |
申请日期 |
1991.04.11 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
FOO, PANG-DOW;MANOCHA, AJIT S.;MINER, JOHN F.;PAI, CHIEN-SHING |
| 分类号 |
C23C16/40;C23C16/511;H01L21/316 |
主分类号 |
C23C16/40 |
| 代理机构 |
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