Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz

摘要

Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase. According to the invention, the entire inside surface of the processing vessel is provided with a highly pure silicon layer by precipitation from the gaseous phase. The silicon layer and its quartz base are thereafter tempered at a temperature of at least 1,000 DEG C. The silicon layer is then selectively removed from its quartz base and the processing vessel is then ready for use as intended.