| 摘要 |
PURPOSE:To obtain a self temperature control function from low to high temper ature area and freely control and design power density by controlling the compo sition of a sintered body of silicon carbide silicon mononitride type, and setting the value of the specific resistivity of ceramics. CONSTITUTION:The composition formula {(SiC)1-x(Si3N4)x} of the sintered body of the silicon carbide silicon mononitride of a ceramic base 1, x is controlled within the range 0.15<=x<=0.95 whereby the value of the specific resistivity of the ceramic is controlled and set within the range of 10<-2> to 10<5>(OMEGA.cm). In a general formula {>>M11-a(SiC)a]1-x>>M21-b(Si3N4)b]x} obtained when trace amounts of elements are added and dissolved in the SiC and Si3N4 in the composition formula of the base 1, Ml is more than one kind of metal elements selected among B,A,Ca and Mg and M2 is more than one kind of metal elements selected among Li, Mg, Ca, Al, Y, La and Ga and (a) is controlled within the range 0.02<=a<=0.25 and (b) in the range 0<b<=0.16 and then Curie temperature, i.e., a self temperature control point can be set within the range of-120 to 1.200 deg.C. |
