| 摘要 |
PURPOSE:To enable a semiconductor thin film to be used as a miniature constant current source or a voltage generator in a semiconductor device by a method wherein an alternating or a pulse voltage is applied to an electrode, and a current is made to flow through the semiconductor thin film composed of first-fourth regions, or a prescribed voltage is generated in the first region. CONSTITUTION:A silicon thin film 13 is formed on a P-type silicon substrate 11 through the intermediary oxide film 12, where the film 13 is composed of a high concentration P<+>-type impurity region 14, an N-type impurity region 15, a P-type impurity region 16, and a high concentration N<+>-type impurity region 17, and a polysilicon electrode layer 19 is provided onto the N-type impurity region 15 and the P-type impurity region 16 through the intermediary of a silicon oxide film 18. A positive pulse voltage of 0V or above is applied to the electrode 19, a current is made to flow through the silicon thin film 13 composed of the P<+>-type impurity region 14-the N<+>-type impurity region 17 to induce a negative potential in the P<+>-type impurity region 14 connected to a substrate voltage VBB, of the P-type silicon substrate 11. |
