| 发明名称 |
Field effect transistor with alpha particle protection |
| 摘要 |
An FET structure with improved alpha -particle immunity or soft error immunity particularly provided in a semi-insulating substrate. This structure includes some layer which can prevent both electrons and holes generated in a substrate by the incidence of alpha -particles from being injected into the FET.
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| 申请公布号 |
US5124770(A) |
申请公布日期 |
1992.06.23 |
| 申请号 |
US19900512501 |
申请日期 |
1990.04.20 |
| 申请人 |
HITACHI, LTD. |
发明人 |
UMEMOTO, YASUNARI;UEYANAGI, KIICHI;SHIGETA, JUNJI;HASHIMOTO, NORIKAZU |
| 分类号 |
H01L29/812;H01L21/338;H01L29/10 |
主分类号 |
H01L29/812 |
| 代理机构 |
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