发明名称 CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR DEVICE
摘要 The method for forming contact windows into the nonconducting layers in different heights comprises the steps of sequentially forming a first nonconducting steps of sequentially forming a first nonconducting layer (2) and a second conducting layer (3) on a first conducting layer (1), etching a predetermined portion of the second conducting layer to form a second nonconducting layer (4) thereon, forming a photoresist (5) for a mask of contact window and apply a second photoresist (7) thereon, removing a predetermined region of the second photoresist for forming a contact window, sequentially etching the second and first nonconducting layers by using the photoresists as mask, removing the second photoresist to etch the exposed first and second nonconducting layers by using the first photoresist as a mask to form a contact window with uniform width and removing the first photoresist to form a third conducting layer (6) thereon, thereby minimizing the contact failure.
申请公布号 KR920004909(B1) 申请公布日期 1992.06.22
申请号 KR19880012028 申请日期 1988.09.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, HAN - SU
分类号 H01L21/00;H01L21/28;(IPC1-7):H01L21/00 主分类号 H01L21/00
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