发明名称 IMPREGNATED TYPE CATHODE AND MANUFACTURING METHOD THE SAME
摘要 <p>The impregnated cathode is produced by (a) sintering a tungsten powder under the reduction atmosphere at 1900-2300 deg.C to obtain a sintered body, (b) infiltrating an oxide of BaO, CaO and Al2O3 in the body to form a porous metal substance, (c) inserting the substance into the ring of a high m.p. metal material, (d) melt-spraying at least one of W, Mo and/or Ta beneath the substrate by the arc plasma spraying method to form a sealing layer, (e) horizontally inserting the sealing layer into the sleeve, (f) forming a coating layer on the substrate, and (g) fixing the heater to the inner of the sleeve. The cathode has an excellent electron emission effect of a high current density.</p>
申请公布号 KR920004896(B1) 申请公布日期 1992.06.22
申请号 KR19890020525 申请日期 1989.12.30
申请人 SAM SUNG ELECTRON DEVICES CO., LTD. 发明人 JU, GYU - NAM;CHONG, JONG - IN;CHOI, JONG - SO;RHO, HWAN - CHOL
分类号 H01J1/28;H01J9/08;(IPC1-7):H01J1/28 主分类号 H01J1/28
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