MINIMUM CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method for forming a contact by using a proximity effect comprises depositing a photoresist (1) on a substrate (2), exposing the photoresist (1) by using a mask pattern for a contact to develop the exposed photoresist to form a mask pattern on the photoresist, and etching the exposed layer of the substrate through the pattern window by using the developed photoresist as a mask. The mask pattern for a contact is formed with a rectangular or cross shape. One width (W3) is larger than the minimum relolution width (W1) and another width (W2) is less than the width (W1). On developing the photoresist defining the contact pattern, the larger width (W3) assists in the development of the smaller width (W2). The size of the contact is changed by adjusting the larger width (W3).