| 摘要 |
<p>PURPOSE:To peel photo-resist films in a short time without damaging a mask substrate by using a gas which quickly reacts with photoresist films and a gas which slowly reacts with the films as process gases stepwise. CONSTITUTION:A mask substrate 8 having metal patterns 11 formed thereon by etching with photo-resist films 10 used as masks is put in a chamber 1 and air is discharged from the chamber 1 by a vacuum pump 3 and then such a process gas as reacting with the films 10 is made to flow into the chamber 1 from a bomb A. While the inside of the chamber 1 is controlled to fixed pressure, high-frequency power is applied to an electrode 2 to cause discharge and oxygen radicals are generated so that the films 10 are peeled. This process is stopped while the films 10 slightly remain on the patterns 11. Then another process gas by which oxygen radicals are slowly generated is introduced from a bomb B and a similar process is carried out.</p> |
