| 摘要 |
PURPOSE:To realize high resistance to heat, chemicals and humidity, and obtain excellent transmission for visible light and surface characteristics, by using a target composed of silicon carbide and carbon, and forming an inorganic thin film by a sputtering method. CONSTITUTION:A target composed of silicon carbide and carbon is used, and an inorganic thin film is obtained by sputtering method. The title X-ray transmission film used as the mask for X-ray lithography is composed of the above thin film. An SiC thin film having a visible light transmittance higher than or equal to 37% and a tensile stress in the range of 1X10<8>-10<10> dyne/cm<2> is very useful for an X-ray transmission film used as a mask for X-ray lithography. SiC and C whose purity is as high as possible and higher than or equal to 99%, or preferably higher than or equal to 99.9% are desirable for forming the target. In the mixed components, a little amount of, e.g. boron (B) or various kinds of silicon nitride and the like are added as other components and used. |
