| 摘要 |
PURPOSE:To prevent an etching shape from becoming larger than a resist shape, and accurately transfer a pattern, by using a mask having an uneven shape on the side surface of a pattern aperture. CONSTITUTION:When resist 3, 4 are exposed and developed by specified exposure amount and selectively eliminated with developer and the like, the side wall of a resist aperture part has a wavy shape. By using this resist as a mask 11, a substrate is subjected to RIE etching. Positive ions 5 which are projected with an incident angle distribution collide with the side surface of the mask 11 (pattern aperture side surface), and are irregularly reflected. As a result, the ions reflected the side surface of the mask 11 do not travel in a specific direction, and a pattern identical to a mask size can be transferred. Thereby so-called bowing phenomenon that the etching shape becomes larger than the pattern shape is not generated. |
