| 摘要 |
PURPOSE:To enable manufacture by a simplified process and sure electrical connection to a conductive region, by depositing a metal film pattern, only on the pattern of a polysilicon film by using selective CVD, which film is formed on the upper surface of an insulating film and the inner surfaces of contact holes. CONSTITUTION:A polysilicon film 13 is deposited by CVD, so as to cover the upper surface of an insulating film 12 and the inner surfaces of contact holes 12a. A resist pattern 14 is formed on the polysilicon film 13, which is patterned by etching using the resist pattern 14 as a mask. A section of the polysilicon film 13 along 1B-1B after patterning is shown in figure. The resist pattern 14 is eliminated and the polysilicon film pattern 13 is exposed. A metal film pattern 15 is formed by selective CVD, so as to fill the contact holes 12a and cover only the polysilicon film pattern. |
