| 摘要 |
PURPOSE:To reduce the area occupied by a semiconductor storage device and, at the same time, to make the device more highly integrated by constituting a memory cell of a memory cell for transferring information and memory cells for storage and connecting the bit line connected to one of the memory cells for storage with the bit line connected to the other memory cell for storage through a capacitor. CONSTITUTION:A memory cell 1 is divided into a memory cell 1a for transferring information and memory cells 1b for storage and one of the memory cells 1b for storage is connected to the other memory cell 1b for storage through a capacitor C. Accordingly, the cell 1a for transfer is used as a bit line BL and a transfer gate and bit-line collector can be omitted and the memory cell 1 can be connected to the bit line BL irrespective of the number, since stored information is sent to a sense amplifier from the memory cells 1b for storage through the memory cell 1a for storage through the memory cell 1a for transfer. Therefore, the area occupied by this semiconductor storage device can be suppressed to a small value and, at the same time, the device can be more highly integrated. |
