| 摘要 |
PURPOSE:To make it possible to attain an early delivery date for ROMs in the mass production stage, by implanting ions after removing the insulating film between layers by dry etching. CONSTITUTION:After forming a photoresist pattern 9, the insulating film 7A between layers above an impurity taken-in region 11 is selectively etched by dry etching. The end point of the dry etching is judged at a point when light emission of nitrogen in a silicon nitride film 6 is detected. Next, from above a gate electrode 4 from which the insulating film 7 between the layers is removed, boron ions are implanted under another condition of an accelerating voltage 150keV, 3X10<12>cm<-2> by ion implantation 10. After the removal of photoresist, annealing is done. Following this, a plasma silicon nitride film is deposited by an atmospheric CVD method to form a surface protecting film. |
