| 摘要 |
PURPOSE:To avoid the corrosion of a metallic wiring starting from a bonding pad part without deteriorating the reliability upon a wiring part by a method wherein silicon is led in the bonding pad part of the metallic wiring to partially augment the concentration thereof. CONSTITUTION:An aluminum wiring 13 is formed on a semiconductor substrate 11 covered with an insulating film 12 having an opening 12a and then the whole surface is coated with a silicon nitride film 14 while another opening part 14a is made in a bonding pad part 15. Furthermore, a photoresist film 19 is formed to form a photoresist pattern having an opening in almost the same size as that of the opening 14a in the bonding pad part 15. Later, the whole surface of the substrate 11 is coated with a silicon film 17 by sputtering step. Next, the photoresist film 19 is melted down using an organic solvent; the silicon film 17 on the surface and side surfaces of the film 19 are simultaneously removed; and after the formation of a silicon film 17a in almost the same size as that of the opening part 14a of the silicon nitride film 14 in the pad part 15, the whole body is heat-treated at 450 deg.C for 30 minutes in nitrogen atmosphere so as to diffuse the silicon film 17a in an aluminum film. |
