| 摘要 |
PURPOSE:To make it possible to manufacture a thin film transistor(TFT) at a high yield by forming a passivation film to be continuous to the side face of a channel layer between first and second insulation films. CONSTITUTION:After a gate electrode and an anodic oxide film 3 are formed on a glass substrate 1 by a prescribed process, a gate insulation film 4, a semiconductor layer 15 and a rear protection film 6 are formed successively and, moreover, a passivation film 25 of SiO2 is formed by anodic oxidation of the semiconductor layer 15 in a part to be a channel layer. Then, a prescribed heat treatment is executed. The channel layer 5 and the passivation film 25 are made continuous so that the side face of the channel layer 5 may not be exposed. According to this constitution, TFT with little nonuniformity in an electrical characteristic can be obtained at a high yield of manufacture.
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