Thin defect-free epitaxial semiconductor layer mfr. - by liq. phase epitaxy of supersaturated melt, moved over substrate in heated reaction chamber of sliding member with rectangular lower opening

摘要

Mfg. a semiconducting layer by liquid-phase epitaxy on a semiconducting substrate where a supersatd. melt of a material of the layer to be deposited is moved over the substrate in a heated reaction space in a chamber of a sliding member provided with a substantially rectangular lower opening and driven by a drive unit. The width (33) of the opening (30) in the sliding direction and the sliding speed (v) of the sliding member (17) are selected so that the contact time between the melt (31) and the substrate (26) is less than or equal to 0.05 seconds, most pref. less than 0.01 seconds. A device for carrying out the above process, comprises a vacuum-tight reaction space, a support in the latter for at least one substrate to be coated with at least one epitaxial layer, which substrate can be inserted in a recess in the support and wherein the masses to be moved are minimised to obtain high speeds of displacement. USE/ADVANTAGE - For the mfr. of semiconducting epitaxial layers e.g. multilayered structures in the Ga(Al)As system. Produces very thin, defect-free epitaxial layers of good surface quality.