| 发明名称 |
Process for fabricating PZT capacitors as integrated circuit memory elements and a capacitor storage element. |
| 摘要 |
<p>A method of forming a planar storage capacitor element having a noble metal or noble metal alloy top electrode (22), a layer of lead zirconate titanate (22), and a noble metal or noble metal alloy bottom electrode (16, 18). <IMAGE></p> |
| 申请公布号 |
EP0490288(A2) |
申请公布日期 |
1992.06.17 |
| 申请号 |
EP19910120962 |
申请日期 |
1991.12.06 |
| 申请人 |
RAMTRON CORPORATION |
发明人 |
SCHUELE, PAUL J.;KAMMERDINER, LEE;LARSON, WILLIAM;TRAYNOR, STEVEN D. |
| 分类号 |
H01L21/02;H01L27/04;H01G4/224;H01G7/06;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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