| 发明名称 |
Devices based on Si/Ge. |
| 摘要 |
<p>High speed transistor devices for use in high speed circuitry such as laser driver circuitry are formed by utilizing a high temperature deposition process. For example, chemical vapor deposition performed at temperatures on the order of 900 DEG C for deposition of Si/Ge materials leads to bipolar devices having excellent properties. In particular, such devices are mechanically stable and are relatively defect free.</p> |
| 申请公布号 |
EP0490531(A2) |
申请公布日期 |
1992.06.17 |
| 申请号 |
EP19910311018 |
申请日期 |
1991.11.28 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
BRASEN, DANIEL;FELDMAN, LEONARD CECIL;GREEN, MARTIN LAURENCE;WEIR, BONNIE ELAINE |
| 分类号 |
C30B25/00;C30B29/00;H01L21/205;H01L21/331;H01L29/16;H01L29/73;H01L29/737;H01L29/76;H01L29/772 |
主分类号 |
C30B25/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
