| 摘要 |
<p>A semiconductor device of a multilayer interconnection structure includes a plurality of insulating layers (7A,7B,7C) and a plurality of metal interconnection layers (11A,11B,11C). The uppermost metal interconnection layer is formed in a hall in the uppermost interlayer insulating layer. The uppermost interconnection layer is formed as a bonding pad portion and a part of the layer is formed into a ring-shaped portion (116) so as to cover the side portion of the hall. <IMAGE></p> |
