Dry-developable negative resist systems - have irradiation-sensitive resist layer based on binding agent and X=ray or electron ray sensitive component, with additional polymer layer

摘要

In dry-developable negative resist systems with very dry sensitivity for electron ray and X-ray lithography, the irradiation-sensitive resist layer based on a binding agent comprising a condensn. prod. of a cresol mixt. and formaldehyde, and an electron ray or X-ray sensitive component of formula (I) is covered with an additional polymer layer, where R = alkyl or H and D = a gp. of formula D1 or D2. The additional polymer layer pref. comprises a water-soluble polymer, pref. polyvinylpyrrolidone. The additional layer is removed prior to gas phase silylation using water. USE/ADVANTAGE - High selectivity of the gas phase silylation in the irradiated region is achieved, a negative image of large gradient is obtd., and sensitivity is enhanced. Useful for structuring of semiconductor materials in the direct write process or for prodn. of masks for photo- or X-ray lithograph. Useful in microelectronics.