| 摘要 |
PURPOSE:To realize small particle diameters, a high resistance and a fine structure and, further, obtain a uniformity over the whole surface of a wafer by a method wherein a plurality of polycrystalline silicon layers and a plurality of silicon oxide layers are alternately built up. CONSTITUTION:A plurality of polycrystalline silicon layers 1 and a plurality of silicon oxide layers 2 are alternately built up. It is recommended to build up about 5 polycrystalline silicon layers 1 and about 5 silicon oxide layers 2. With this constitution, the particle diameters of the polycrystalline silicon can be smaller than 500Angstrom which is sufficiently finer than the line width of a high resistance element and a high resistance value can be realized. As a result, a device employing such as high resistance element can have a fine structure and a uniformity over the whole surface of a wafer can be obtained. |
