SUBSTRATE FOR GROWING GALLIUM NITRIDE COMPOUND-SEMICONDUCTOR DEVICE AND LIGHT EMITTING DIODE

摘要

A substrate for producing a gallium nitride compound-semiconductor (AlxGa1-xN; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380 DEG to 800 DEG C. to have a thickness of 100 to 500 ANGSTROM . Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (AlxGa1-xN; X=0 inclusive). The layer of gallium nitride compound-semiconductor (AlxGa1-xN; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.