Semiconductor device comprising a silicide layer, and method of making the device,申请号US19910683891-传众专利搜索

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发明名称	Semiconductor device comprising a silicide layer, and method of making the device
摘要
申请公布号	US5122479(A)	申请公布日期	1992.06.16
申请号	US19910683891	申请日期	1991.04.11
申请人	AT&T BELL LABORATORIES	发明人	AUDET, SARAH A.;RAFFERTY, CONOR S.;SHORT, KENNETH T.;WHITE, ALICE E.
分类号	H01L21/28;H01L21/265;H01L21/285	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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