发明名称 |
HIGH FREQUENCY ECL VOLTAGE CONTROLLED RING OSCILLATOR |
摘要 |
-?- HIGH FREQUENCY ECL VOLTAGE CONTROLLED RING OSCILLATOR An emitter-coupled logic (ECL) gate configuration is provided that allows variations in the bias current for controlling propagation delay. The emitter coupled logic circuitry includes a plurality of input transistors having commonly-coupled emitters. The collector of each input transistor is connected to receive a control voltage. A current source is connected between the commonly-coupled emitters and ground. Circuitry, preferably a variable resistance, is connected between the collectors of the input transistors and a supply voltage. A bias voltage controls the charging current provided to the collectors of the ECL input transistors. |
申请公布号 |
CA1303690(C) |
申请公布日期 |
1992.06.16 |
申请号 |
CA19890614696 |
申请日期 |
1989.09.29 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DAVIS, CRAIG M.;RASMUSSEN, RICHARD R. |
分类号 |
H03K19/086;H03K3/03;H03K5/00;H03K5/13;H03L7/099 |
主分类号 |
H03K19/086 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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