| 摘要 |
PURPOSE:To adequately hydrogenize a thin film transistor and reduce power consumption and improve data maintenance features by placing a hydrogen supply film between the thin film transistor and the passivation layer. CONSTITUTION:In a semiconductor memory device in which memory cells are constituted of a flip-flop format that makes the thin film transistor a load device, a hydrogen supply P-SiN film 27, which is totally separate from the P-SiN film 11, is placed between a polycrystalline Si film 13, which functions 88 the thin film transistor channel, and a P-SiN film 11, which is the passivation film, for example, is arranged beneath PSG film 15. The hydrogen supplied by a P-SiN film 27 is diffused to the polycrystalline Si film 13 without being stopped by the PSG film is and this film is adequately hydrogenized. Further, while the PSG film 15 is being deposited at very high CVD temperatures, hydrogen from the P-SiN film 27 is effectively dissociated. This also enables the polycrystalline film 13 to be adequately hydrogenized. As a result, the thin film transistor features are enhanced and the on/off current increases. |
